Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma
نویسندگان
چکیده
منابع مشابه
Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwafer and superwafer topography
Above wafer topography of the substrate, such as wafer clamps, is known to impact adjacent feature profiles during plasma etching of microelectronic devices. The consequences of subwafer topography, such as electrostatic chucks and cooling channels, on feature profiles is less well characterized. To investigate these issues we have developed and integrated a plasma equipment model and a Monte C...
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The etching of GaN was investigated in an Ar/Cl2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl2 plasma characteristics. Etch rates of 500 nm/min were obtained at relatively low Cl2 fractions of 50%. The dominant emissio...
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Laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) is one of the most successful direct solid sampling techniques for major, minor and trace element analysis. However, this technique still suffers from matrix dependent ablation characteristics, which makes quantification very difficult. Furthermore, the laser sampled material alters its composition from the sample to the de...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: 2158-3226
DOI: 10.1063/6.0000883